Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
190 W
Series:
MDmesh DM2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
130 mΩ
Detailed Description:
N-Channel 600V 24A (Tc) 190W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB33
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1870pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ DM2
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Customer Reference:
Power Dissipation (Max):
190W (Tc)
Technology:
MOSFET (Metal Oxide)
