Infineon Technologies IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3 Infineon Technologies
Infineon Technologies

Product Information

Detailed Description:
N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
Vgs(th) (Max) @ Id:
2V @ 50µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
IPD30N06
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 22A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
55V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1091pF @ 25V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO252-3-11
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Customer Reference:
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IPD30N06S2L23ATMA3. It features n-channel 55v 30a (tc) 100w (tc) surface mount pg-to252-3-11. The typical Vgs (th) (max) of the product is 2v @ 50µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ipd30n06. The maximum gate charge and given voltages include 42nc @ 10v. It has a maximum Rds On and voltage of 23mohm @ 22a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The infineon technologies's product offers user-desired applications. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1091pf @ 25v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-to252-3-11 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 30a (tc). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Wafer Fab 12/Feb/2019(PCN Assembly/Origin)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search IPD30N06S2L23ATMA3 on website for other similar products.
We accept all major payment methods for all products including ET11155022. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPD30N06S2L23ATMA3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPD30N06S2L23ATMA3. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPD30N06S2L23ATMA3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11155022 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11155022.
Yes. We ship IPD30N06S2L23ATMA3 Internationally to many countries around the world.