Vishay Siliconix SIRA10DP-T1-GE3

SIRA10DP-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 10A, 10V
title:
SIRA10DP-T1-GE3
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
SIRA10DP-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3178400
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 40W (Tc)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2425 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA10
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIRA10DP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 3.7mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 40w (tc). It has a long 22 weeks standard lead time. The product's input capacitance at maximum includes 2425 pf @ 15 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 51 nc @ 10 v. powerpak® so-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sira10, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev 07/Jun/2023(PCN Design/Specification)
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New solder paste 26/May/2023(PCN Design/Specification)
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SIRA10DP(Datasheets)
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PowerPak SO-8 Drawing(Product Drawings)

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FAQs

Yes. You can also search SIRA10DP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11145513. Please check your shopping cart at the time of order.
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIRA10DP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIRA10DP-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11145513 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11145513.
Yes. We ship SIRA10DP-T1-GE3 Internationally to many countries around the world.