Category:
Power MOSFET
Dimensions:
6.1 x 5.1 x 1.05mm
Maximum Continuous Drain Current:
140 A
Width:
5.1mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2100 pF @ 25 V
Length:
6.1mm
Pin Count:
4+Tab
Forward Transconductance:
92S
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
NTMFS5C442N
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.3 mΩ
Manufacturer Standard Lead Time:
28 Weeks
Detailed Description:
N-Channel 40V 29A (Ta), 140A (Tc) 3.7W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2100pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
29A (Ta), 140A (Tc)
Customer Reference:
Power Dissipation (Max):
3.7W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
