Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
2850 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
148 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Series:
STripFET F6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
43 ns
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
29 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20.5mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STS7P4LLF6 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5455721
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2850 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ F6
Supplier Device Package:
8-SO
Current - Continuous Drain (Id) @ 25°C:
7A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS7P4
ECCN:
EAR99
