Microchip Technology DN3535N8-G
Product Information
FET Feature:
Depletion Mode
Rds On (Max) @ Id, Vgs:
10Ohm @ 150mA, 0V
Detailed Description:
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Input Capacitance (Ciss) (Max) @ Vds:
360pF @ 25V
Mounting Type:
Surface Mount
Drain to Source Voltage (Vdss):
350V
Vgs (Max):
±20V
Supplier Device Package:
TO-243AA (SOT-89)
Manufacturer Standard Lead Time:
18 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Drive Voltage (Max Rds On, Min Rds On):
0V
Package / Case:
TO-243AA
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
230mA (Tj)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microchip Technology
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Yes. We ship DN3535N8-G Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is DN3535N8-G. The FET features of the product include depletion mode. It has a maximum Rds On and voltage of 10ohm @ 150ma, 0v. It features n-channel 350v 230ma (tj) 1.6w (ta) surface mount to-243aa (sot-89). The product's input capacitance at maximum includes 360pf @ 25v. The product is available in surface mount configuration. The product has a 350v drain to source voltage. The maximum Vgs rate is ±20v. to-243aa (sot-89) is the supplier device package value. It has typical 18 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. Moreover, the product comes in to-243aa. The product carries maximum power dissipation 1.6w (ta). The continuous current drain at 25°C is 230ma (tj). This product use mosfet (metal oxide) technology. The microchip technology's product offers user-desired applications.
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