STMicroelectronics STD10N60DM2

STD10N60DM2 STMicroelectronics
STMicroelectronics

Product Information

Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 650V 8A (Tc) 109W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD10
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
530mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
529pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ DM2
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Customer Reference:
Power Dissipation (Max):
109W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD10N60DM2. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 650v 8a (tc) 109w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std10. The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 530mohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 529pf @ 100v. The product is available in surface mount configuration. The product mdmesh™ dm2, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 109w (tc). This product use mosfet (metal oxide) technology.

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STD10N60DM2 Datasheet(Datasheets)

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FAQs

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