Toshiba Semiconductor and Storage TK33S10N1Z,LQ

TK33S10N1Z-LQ Toshiba Semiconductor and Storage TK33S10N1Z,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 500µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 16.5A, 10V
edacadModel:
TK33S10N1Z,LQ Models
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815226
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2050 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
DPAK+
Current - Continuous Drain (Id) @ 25°C:
33A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK33S10
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK33S10N1Z,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 500µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 9.7mohm @ 16.5a, 10v. The maximum gate charge and given voltages include 28 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 2050 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 33a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk33s10, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK33S10N1Z,LQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK33S10N1Z,LQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11069342 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11069342.
Yes. We ship TK33S10N1Z,LQ Internationally to many countries around the world.