STMicroelectronics STP6N65M2

STP6N65M2 STMicroelectronics
STMicroelectronics

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.35Ohm @ 2A, 10V
title:
STP6N65M2
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STP6N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5030760
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
226 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™
Gate Charge (Qg) (Max) @ Vgs:
9.8 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP6N
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is STP6N65M2. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 1.35ohm @ 2a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 60w (tc). The product's input capacitance at maximum includes 226 pf @ 100 v. The product is available in through hole configuration. The product mdmesh™, is a highly preferred choice for users. The maximum gate charge and given voltages include 9.8 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp6n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Site Add 3/Aug/2018(PCN Assembly/Origin)
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Mult Dev OBS 3/Jul/2020(PCN Obsolescence/ EOL)
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ST(F,P,U)6N65M2(Datasheets)

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