Maximum Continuous Drain Current:
279 A
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
140 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
2.9 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Rds On (Max) @ Id, Vgs:
2mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
81 nC @ 10 V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD18535KTTT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5994574
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
300W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6620 pF @ 30 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
TO-263 (DDPAK-3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta), 279A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD18535
ECCN:
EAR99
