Rohm Semiconductor SCT2750NYTB

SCT2750NYTB Rohm Semiconductor
SCT2750NYTB
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 1700V 5.9A (Tc) 57W (Tc) Surface Mount TO-268
Vgs(th) (Max) @ Id:
4V @ 630µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Part Number:
SCT2750
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 18V
Rds On (Max) @ Id, Vgs:
975mOhm @ 1.7A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
1700V
Vgs (Max):
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:
275pF @ 800V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-268
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.9A (Tc)
Customer Reference:
Power Dissipation (Max):
57W (Tc)
Technology:
SiCFET (Silicon Carbide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is SCT2750NYTB. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 1700v 5.9a (tc) 57w (tc) surface mount to-268. The typical Vgs (th) (max) of the product is 4v @ 630µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d³pak (2 leads + tab), to-268aa. Base Part Number: sct2750. The maximum gate charge and given voltages include 17nc @ 18v. It has a maximum Rds On and voltage of 975mohm @ 1.7a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The rohm semiconductor's product offers user-desired applications. The product has a 1700v drain to source voltage. The maximum Vgs rate is +22v, -6v. The product's input capacitance at maximum includes 275pf @ 800v. The product is available in surface mount configuration. to-268 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.9a (tc). The product carries maximum power dissipation 57w (tc). This product use sicfet (silicon carbide) technology.

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SCT2H12NY ESD Data(Environmental Information)
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SiC Whisker Info(Environmental Information)
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SiC Level 1 MSL(Environmental Information)
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TO-268-2L Taping Spec(Datasheets)
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SCT2750NY(Datasheets)
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SiC Flammability(Other Related Documents)
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MOS-2GSMD Reliability Test(Other Related Documents)

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