Diodes Incorporated ZXMN10A11GTA

ZXMN10A11GTA Diodes Incorporated
ZXMN10A11GTA
ZXMN10A11GTA
Diodes Incorporated

Product Information

Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
ZXMN10
Gate Charge (Qg) (Max) @ Vgs:
5.4nC @ 10V
Rds On (Max) @ Id, Vgs:
350mOhm @ 2.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
274pF @ 50V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Customer Reference:
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMN10A11GTA. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 100v 1.7a (ta) 2w (ta) surface mount sot-223-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: zxmn10. The maximum gate charge and given voltages include 5.4nc @ 10v. It has a maximum Rds On and voltage of 350mohm @ 2.6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The diodes incorporated's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 274pf @ 50v. The product is available in surface mount configuration. sot-223-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.7a (ta). The product carries maximum power dissipation 2w (ta). This product use mosfet (metal oxide) technology.

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Mult Dev A/T Site 31/Mar/2021(PCN Assembly/Origin)
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ZXMN10A11G(Datasheets)
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Date Code Mark Update 13/Jan/2015(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)

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FAQs

Yes. You can also search ZXMN10A11GTA on website for other similar products.
We accept all major payment methods for all products including ET11023344. Please check your shopping cart at the time of order.
You can order Diodes Incorporated brand products with ZXMN10A11GTA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Incorporated ZXMN10A11GTA. You can also check on our website or by contacting our customer support team for further order details on Diodes Incorporated ZXMN10A11GTA.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11023344 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Diodes Incorporated" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11023344.
Yes. We ship ZXMN10A11GTA Internationally to many countries around the world.