Rohm Semiconductor R6025FNZC8

R6025FNZC8 Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
180mOhm @ 12.5A, 10V
Detailed Description:
N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-3PF
Input Capacitance (Ciss) (Max) @ Vds:
3500pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 1mA
Series:
*
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Supplier Device Package:
TO-3PF
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3 Full Pack
Power Dissipation (Max):
150W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6025FNZC8. It has a maximum Rds On and voltage of 180mohm @ 12.5a, 10v. It features n-channel 600v 25a (tc) 150w (tc) through hole to-3pf. The product's input capacitance at maximum includes 3500pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 85nc @ 10v. to-3pf is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3 full pack. The product carries maximum power dissipation 150w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 25a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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R6xxxxNZC8 03/Dec/2019(PCN Obsolescence/ EOL)
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Mult Dev EOL 26/Jan/2020(PCN Obsolescence/ EOL)
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R6025FNZ(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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TO252 MOS Reliability Test(Other Related Documents)
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TO3PF Inner Structure(Other Related Documents)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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R6025FNZ ESD Data(Environmental Information)
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TO-3PF Constitution Material List(Environmental Information)

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