Toshiba Semiconductor and Storage SSM3K116TU,LF

SSM3K116TU-LF Toshiba Semiconductor and Storage SSM3K116TU,LF
SSM3K116TU,LF
SSM3K116TU,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM
Vgs(th) (Max) @ Id:
1.1V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-SMD, Flat Lead
Base Part Number:
SSM3K116
Rds On (Max) @ Id, Vgs:
100mOhm @ 500mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
245pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
UFM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K116TU,LF. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 30v 2.2a (ta) 500mw (ta) surface mount ufm. The typical Vgs (th) (max) of the product is 1.1v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat lead. Base Part Number: ssm3k116. It has a maximum Rds On and voltage of 100mohm @ 500ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 245pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. ufm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.

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Mosfets Prod Guide(Datasheets)

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