Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.17mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Series:
STripFET H7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 40A, 10V
edacadModel:
STH80N10F7-2 Models
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5018866
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 50 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VII
Supplier Device Package:
H2PAK-2
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH80N
ECCN:
EAR99
