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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K59CTB,L3F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, no lead. It has a maximum Rds On and voltage of 215mohm @ 1a, 8v. The maximum gate charge and given voltages include 1.1 nc @ 4.2 v. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 8v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 130 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3b is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k59, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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