Fairchild/ON Semiconductor FDB12N50FTM_WS

FDB12N50FTM_WS Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
6 Weeks
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
700 mOhm @ 6A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1395pF @ 25V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Power Dissipation (Max):
165W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FDB12N50FTM_WS. It has typical 6 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 700 mohm @ 6a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The fairchild/on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1395pf @ 25v. The product is available in surface mount configuration. The product unifet™, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11.5a (tc). The product carries maximum power dissipation 165w (tc). This product use mosfet (metal oxide) technology.

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FDB12N50F(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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1346 (UK2011-EN PDF)(Catalog Page)
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TO263 31/Aug/2016(PCN Packaging)

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