Category:
Power MOSFET
Dimensions:
6.6 x 6.2 x 2.4mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
17 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
40 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1950 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
STripFET II
Maximum Gate Source Voltage:
-15 V, +15 V
Height:
2.4mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STD60NF55LT4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1039374
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD60
ECCN:
EAR99
