Category:
Power MOSFET
Dimensions:
1.6 x 1.5 x 0.56mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
128 pF @ 10 V
Length:
1.6mm
Pin Count:
6
Forward Transconductance:
1.9S
Typical Turn-Off Delay Time:
14.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.56mm
Typical Turn-On Delay Time:
5.1 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
310 mΩ
Base Part Number:
SCH143
Detailed Description:
N-Channel 20V 2A (Ta) 800mW (Ta) Surface Mount SOT-563/SCH6
Input Capacitance (Ciss) (Max) @ Vds:
128pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
125mOhm @ 1A, 4.5V
Supplier Device Package:
SOT-563/SCH6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
