Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 15.75mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
630 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
450 pF @ 50 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
7.8 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
70 W
Series:
MDmesh
Maximum Gate Source Voltage:
±25 V
Height:
15.75mm
Typical Turn-On Delay Time:
7.8 ns
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
630mOhm @ 3.5A, 10V
title:
STP10NM50N
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STP10NM50N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2440270
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 50 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP10
ECCN:
EAR99
