Toshiba Semiconductor and Storage TPC8051-H(TE12L,Q)

TPC8051-H-TE12L-Q- Toshiba Semiconductor and Storage TPC8051-H(TE12L,Q)
TPC8051-H(TE12L,Q)
TPC8051-H(TE12L,Q)
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
RN1311
Detailed Description:
N-Channel 80V 13A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Input Capacitance (Ciss) (Max) @ Vds:
7540pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.3V @ 1mA
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 6.5A, 10V
Supplier Device Package:
8-SOP (5.5x6.0)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Power Dissipation (Max):
1W (Ta)
Drain to Source Voltage (Vdss):
80V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8051-H(TE12L,Q). Base Part Number: rn1311. It features n-channel 80v 13a (ta) 1w (ta) surface mount 8-sop (5.5x6.0). The product's input capacitance at maximum includes 7540pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The maximum gate charge and given voltages include 85nc @ 10v. It has a maximum Rds On and voltage of 9.7mohm @ 6.5a, 10v. 8-sop (5.5x6.0) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.173", 4.40mm width). The product carries maximum power dissipation 1w (ta). The product has a 80v drain to source voltage. The continuous current drain at 25°C is 13a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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