Toshiba Semiconductor and Storage TPC8051-H(TE12L,Q)

Enrgtech Part No: ET10986067
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Manufacturer Part No:
TPC8051-H(TE12L,Q)
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Manufacturer: Toshiba Semiconductor and Storage

TPC8051-H-TE12L-Q- Toshiba Semiconductor and Storage TPC8051-H(TE12L,Q)

Product Information

Base Part Number:

RN1311

Detailed Description:

N-Channel 80V 13A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)

Input Capacitance (Ciss) (Max) @ Vds:

7540pF @ 10V

Mounting Type:

Surface Mount

Vgs(th) (Max) @ Id:

2.3V @ 1mA

Series:

Gate Charge (Qg) (Max) @ Vgs:

85nC @ 10V

Rds On (Max) @ Id, Vgs:

9.7mOhm @ 6.5A, 10V

Supplier Device Package:

8-SOP (5.5x6.0)

Packaging:

Cut Tape (CT)

Operating Temperature:

150°C (TJ)

FET Type:

N-Channel

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8051-H(TE12L,Q). Base Part Number: rn1311. It features n-channel 80v 13a (ta) 1w (ta) surface mount 8-sop (5.5x6.0). The product's input capacitance at maximum includes 7540pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The maximum gate charge and given voltages include 85nc @ 10v. It has a maximum Rds On and voltage of 9.7mohm @ 6.5a, 10v. 8-sop (5.5x6.0) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.173", 4.40mm width). The product carries maximum power dissipation 1w (ta). The product has a 80v drain to source voltage. The continuous current drain at 25°C is 13a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

Mosfets Prod Guide(Datasheets)

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Toshiba Semiconductor and Storage TPC8051-H(TE12L,Q)

TPC8051-H(TE12L,Q)

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