Renesas Electronics America HAT2131R-EL-E

HAT2131R-EL-E Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
3Ohm @ 450mA, 10V
Detailed Description:
N-Channel 350V 900mA (Ta) 2.5W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
460pF @ 25V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Drain to Source Voltage (Vdss):
350V
Vgs (Max):
±20V
Supplier Device Package:
8-SOP
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
2.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT2131R-EL-E. It has a maximum Rds On and voltage of 3ohm @ 450ma, 10v. It features n-channel 350v 900ma (ta) 2.5w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 460pf @ 25v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 20nc @ 10v. The product has a 350v drain to source voltage. The maximum Vgs rate is ±20v. 8-sop is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 2.5w (ta). The continuous current drain at 25°C is 900ma (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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HAT2131R(Datasheets)

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