Renesas Electronics America RJK60S7DPK-M0#T0
Product Information
FET Feature:
Super Junction
Rds On (Max) @ Id, Vgs:
125mOhm @ 15A, 10V
Detailed Description:
N-Channel 600V 30A (Tc) 227.2W (Tc) Through Hole TO-3PSG
Input Capacitance (Ciss) (Max) @ Vds:
2300pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
+30V, -20V
Supplier Device Package:
TO-3PSG
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
227.2W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK60S7DPK-M0#T0. The FET features of the product include super junction. It has a maximum Rds On and voltage of 125mohm @ 15a, 10v. It features n-channel 600v 30a (tc) 227.2w (tc) through hole to-3psg. The product's input capacitance at maximum includes 2300pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 39nc @ 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is +30v, -20v. to-3psg is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 227.2w (tc). The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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