Rohm Semiconductor RDX080N50FU6

RDX080N50FU6 Rohm Semiconductor
RDX080N50FU6
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
850mOhm @ 4A, 10V
Detailed Description:
N-Channel 500V 8A (Ta) 40W (Tc) Through Hole TO-220FM
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Supplier Device Package:
TO-220FM
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RDX080N50FU6. It has a maximum Rds On and voltage of 850mohm @ 4a, 10v. It features n-channel 500v 8a (ta) 40w (tc) through hole to-220fm. The product's input capacitance at maximum includes 920pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 28nc @ 10v. to-220fm is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 40w (tc). The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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Mult Dev EOL 29/Oct/2018(PCN Obsolescence/ EOL)
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RDX080N50(Datasheets)

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