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Vishay Siliconix SIA459EDJ-T1-GE3

SIA459EDJ-T1-GE3 Vishay Siliconix
SIA459EDJ-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Base Part Number:
SIA459
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
885pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
Out of Bounds
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Customer Reference:
Power Dissipation (Max):
2.9W (Ta), 15.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIA459EDJ-T1-GE3. It features p-channel 20v 9a (tc) 2.9w (ta), 15.6w (tc) surface mount. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® sc-70-6. Base Part Number: sia459. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 35mohm @ 5a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 885pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. out of bounds is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). The product carries maximum power dissipation 2.9w (ta), 15.6w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Addition 22/Jun/2015(PCN Assembly/Origin)
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SIA459EDJ-T1-GE3(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET10956166. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIA459EDJ-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIA459EDJ-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIA459EDJ-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10956166 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10956166.
Yes. We ship SIA459EDJ-T1-GE3 Internationally to many countries around the world.