Vishay Siliconix SUP85N10-10-GE3
Product Information
Manufacturer Standard Lead Time:
18 Weeks
Rds On (Max) @ Id, Vgs:
10.5 mOhm @ 30A, 10V
Detailed Description:
N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
6550pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
TrenchFET®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
160nC @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
3.75W (Ta), 250W (Tc)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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FAQs
Yes. You can also search SUP85N10-10-GE3 on website for other similar products.
We accept all major payment methods for all products including ET10919737. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SUP85N10-10-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SUP85N10-10-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SUP85N10-10-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10919737 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10919737.
Yes. We ship SUP85N10-10-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SUP85N10-10-GE3. It has typical 18 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 10.5 mohm @ 30a, 10v. It features n-channel 100v 85a (tc) 3.75w (ta), 250w (tc) through hole. The product's input capacitance at maximum includes 6550pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 160nc @ 10v. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 3.75w (ta), 250w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 85a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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