Rohm Semiconductor RQ3L050GNTB

RQ3L050GNTB Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
61mOhm @ 5A, 10V
Detailed Description:
N-Channel 60V 12A (Tc) 14.8W (Tc) Surface Mount 8-HSMT (3.2x3)
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 30V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 25µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
2.8nC @ 4.5V
Supplier Device Package:
8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
14.8W (Tc)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3L050GNTB. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 61mohm @ 5a, 10v. It features n-channel 60v 12a (tc) 14.8w (tc) surface mount 8-hsmt (3.2x3). The product's input capacitance at maximum includes 300pf @ 30v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 25µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 2.8nc @ 4.5v. 8-hsmt (3.2x3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powervdfn. The product carries maximum power dissipation 14.8w (tc). The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RQ3L050GN ESD Data(Environmental Information)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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HSMT8-HF Constitution Material List(Environmental Information)
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HSMT8 TB Taping Spec(Datasheets)
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HSMT8 Part Marking(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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HSMT8 Inner Structure(Other Related Documents)

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