ON Semiconductor NTTFS4H05NTWG

NTTFS4H05NTWG ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
3.3 mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
1205pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:
18.9nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Drain to Source Voltage (Vdss):
25V
Standard Package:
5,000
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
2.66W (Ta), 46.3W (Tc)
Current - Continuous Drain (Id) @ 25°C:
22.4A (Ta), 94A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS4H05NTWG. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 3.3 mohm @ 30a, 10v. The product's input capacitance at maximum includes 1205pf @ 12v. The maximum gate charge and given voltages include 18.9nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has a 25v drain to source voltage. It is available in the standard package of 5,000. 8-wdfn (3.3x3.3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 2.66w (ta), 46.3w (tc). The continuous current drain at 25°C is 22.4a (ta), 94a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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NTTFS4H05N(Datasheets)

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