Renesas Electronics America HAT2168H-EL-E

HAT2168H-EL-E Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
7.9mOhm @ 15A, 10V
Detailed Description:
N-Channel 30V 30A (Ta) 15W (Tc) Surface Mount LFPAK
Input Capacitance (Ciss) (Max) @ Vds:
1730pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Supplier Device Package:
LFPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
SC-100, SOT-669
Power Dissipation (Max):
15W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT2168H-EL-E. It has a maximum Rds On and voltage of 7.9mohm @ 15a, 10v. It features n-channel 30v 30a (ta) 15w (tc) surface mount lfpak. The product's input capacitance at maximum includes 1730pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 11nc @ 4.5v. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. lfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 15w (tc). The continuous current drain at 25°C is 30a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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HAT2168H(Datasheets)

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