Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.8 nC @ 4.5 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46 W
Series:
NexFET
Maximum Gate Source Voltage:
-12 V, +16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
7.4 mΩ
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 25V 19A (Ta), 60A (Tc) 2.7W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
CSD16406
Gate Charge (Qg) (Max) @ Vgs:
8.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 12.5V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 60A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Ta)
Technology:
MOSFET (Metal Oxide)
