Rohm Semiconductor RW1C026ZPT2CR

RW1C026ZPT2CR Rohm Semiconductor
RW1C026ZPT2CR
Rohm Semiconductor

Product Information

Base Part Number:
RW1C026
Detailed Description:
P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Rds On (Max) @ Id, Vgs:
70mOhm @ 2.5A, 4.5V
Supplier Device Package:
6-WEMT
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RW1C026ZPT2CR. Base Part Number: rw1c026. It features p-channel 20v 2.5a (ta) 700mw (ta) surface mount 6-wemt. The product's input capacitance at maximum includes 1250pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 10nc @ 4.5v. It has a maximum Rds On and voltage of 70mohm @ 2.5a, 4.5v. 6-wemt is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-563, sot-666. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RW1C026ZP(Datasheets)

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