Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
54.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1817 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
69 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
FDmesh
Maximum Gate Source Voltage:
±25 V
Height:
4.6mm
Typical Turn-On Delay Time:
22 ns
Maximum Drain Source Resistance:
175 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
175mOhm @ 10.5A, 10V
title:
STB26NM60ND
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1817 pF @ 100 V
Mounting Type:
Surface Mount
Series:
FDmesh™ II
Gate Charge (Qg) (Max) @ Vgs:
54.6 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB26N
ECCN:
EAR99
