Infineon Technologies IPP65R660CFDAAKSA1

IPP65R660CFDAAKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 200µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
660mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
62.5W (Tc)
Qualification:
AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds:
543 pF @ 100 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
CoolMOS™
Supplier Device Package:
PG-TO220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP65R
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPP65R660CFDAAKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 200µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 660mohm @ 3.2a, 10v. The maximum gate charge and given voltages include 20 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 62.5w (tc). The product's input capacitance at maximum includes 543 pf @ 100 v. The product is available in through hole configuration. The product is automotive, a grade of class. The product coolmos™, is a highly preferred choice for users. pg-to220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipp65r, a base product number of the product. The product is designated with the ear99 code number.

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IPx65R660CFDA(Datasheets)
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Fundamentals of Power Semiconductors(Other Related Documents)

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