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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM120DA30CT1G. It has a maximum Rds On and voltage of 360mohm @ 25a, 10v. It features n-channel 1200v 31a (tc) 657w (tc) chassis mount sp1. The product's input capacitance at maximum includes 14560pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 8™, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 560nc @ 10v. sp1 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sp1. The product carries maximum power dissipation 657w (tc). The product has a 1200v drain to source voltage. The continuous current drain at 25°C is 31a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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