Microsemi Corporation APT50M65B2LLG

APT50M65B2LLG Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Rds On (Max) @ Id, Vgs:
65mOhm @ 33.5A, 10V
title:
APT50M65B2LLG
Vgs(th) (Max) @ Id:
5V @ 2.5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
694W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7010 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS 7®
Gate Charge (Qg) (Max) @ Vgs:
141 nC @ 10 V
Supplier Device Package:
T-MAX™ [B2]
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
67A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT50M65
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50M65B2LLG. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3 variant. It has a maximum Rds On and voltage of 65mohm @ 33.5a, 10v. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 694w (tc). The product's input capacitance at maximum includes 7010 pf @ 25 v. The product is available in through hole configuration. The product power mos 7®, is a highly preferred choice for users. The maximum gate charge and given voltages include 141 nc @ 10 v. t-max™ [b2] is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 67a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to apt50m65, a base product number of the product. The product is designated with the ear99 code number.

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High-Voltage Power Discretes and Modules(Datasheets)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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