Infineon Technologies IPI100N04S4H2AKSA1

IPI100N04S4H2AKSA1 Infineon Technologies
IPI100N04S4H2AKSA1
IPI100N04S4H2AKSA1
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 70µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7180 pF @ 25 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO262-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPI100N
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPI100N04S4H2AKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 70µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 2.7mohm @ 100a, 10v. The maximum gate charge and given voltages include 90 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 115w (tc). The product's input capacitance at maximum includes 7180 pf @ 25 v. The product is available in through hole configuration. The product optimos™, is a highly preferred choice for users. pg-to262-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipi100n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Fab 12/Feb/2019(PCN Assembly/Origin)
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IPx100N04S4-H2(Datasheets)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET10659160 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10659160.
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