Microsemi Corporation APT33N90JCU3

APT33N90JCU3 Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
Super Junction
Rds On (Max) @ Id, Vgs:
120mOhm @ 26A, 10V
Detailed Description:
N-Channel 900V 33A (Tc) 290W (Tc) Chassis Mount SOT-227
Input Capacitance (Ciss) (Max) @ Vds:
6800pF @ 100V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
3.5V @ 3mA
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
270nC @ 10V
Supplier Device Package:
SOT-227
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tray
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
290W (Tc)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT33N90JCU3. The FET features of the product include super junction. It has a maximum Rds On and voltage of 120mohm @ 26a, 10v. It features n-channel 900v 33a (tc) 290w (tc) chassis mount sot-227. The product's input capacitance at maximum includes 6800pf @ 100v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 3.5v @ 3ma. The product has a 900v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 270nc @ 10v. sot-227 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 290w (tc). The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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STD Dev EOL Jul/2018(PCN Obsolescence/ EOL)

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