Microsemi Corporation APT80SM120B

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
55mOhm @ 40A, 20V
title:
APT80SM120B
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
555W (Tc)
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
235 nC @ 20 V
Supplier Device Package:
TO-247
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT80SM120B. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 55mohm @ 40a, 20v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 555w (tc). The product is available in through hole configuration. The maximum gate charge and given voltages include 235 nc @ 20 v. to-247 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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Mult Devices 16/Oct/2017(PCN Obsolescence/ EOL)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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