Category:
Power MOSFET
Dimensions:
25.25 x 23.25 x 5.7mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1100 V
Maximum Gate Threshold Voltage:
6.5V
Maximum Drain Source Resistance:
290 mΩ
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
310 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
19000 pF@ 25 V
Length:
25.25mm
Pin Count:
24
Forward Transconductance:
32S
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 W
Series:
HiperFET, Polar
Maximum Gate Source Voltage:
-40 V, +40 V
Height:
5.7mm
Typical Turn-On Delay Time:
53 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
290mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
310 nC @ 10 V
Vgs(th) (Max) @ Id:
6.5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1100 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
19000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, PolarP2™
Supplier Device Package:
24-SMPD
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F40
ECCN:
EAR99
