onsemi 2SK3614-Q-TD-E

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
Not applicable
Operating Temperature:
150°C
Package / Case:
TO-243AA
Rds On (Max) @ Id, Vgs:
145mOhm @ 2A, 10V
title:
2SK3614-Q-TD-E
Vgs(th) (Max) @ Id:
2.6V @ 1mA
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Ta), 3.5W (Tc)
Qualification:
-
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 20 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
7.8 nC @ 10 V
Supplier Device Package:
PCP
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is 2SK3614-Q-TD-E. It is assigned with possible HTSUS value of 8541.29.0095. The product is not applicable. The product has 150°c operating temperature range. Moreover, the product comes in to-243aa. It has a maximum Rds On and voltage of 145mohm @ 2a, 10v. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.5w (ta), 3.5w (tc). The product's input capacitance at maximum includes 300 pf @ 20 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 7.8 nc @ 10 v. pcp is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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2SK3614(Datasheets)

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