NXP USA Inc. A2G35S200-01SR3

NXP USA Inc.

Product Information

HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Package / Case:
NI-400S-2S
Current - Test:
291 mA
Voltage - Rated:
125 V
Noise Figure:
-
REACH Status:
REACH Unaffected
Gain:
16.1dB
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
Not Applicable
Current Rating (Amps):
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
NI-400S-2S
Voltage - Test:
48 V
Frequency:
3.4GHz ~ 3.6GHz
Power - Output:
180W
Technology:
GaN HEMT
Base Product Number:
A2G35
ECCN:
DISC 3A001B3
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This is manufactured by NXP USA Inc.. The manufacturer part number is A2G35S200-01SR3. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. Moreover, the product comes in ni-400s-2s. The given current test of the product is [Current -Test]. It also exhibits voltage rating of 125 v. In addition, it is reach unaffected. The 16.1db is the gain value of a bespoke product. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is not applicable. The product is available in surface mount configuration. ni-400s-2s is the supplier device package value. The product has a test voltage of 48 v . Supplied with 3.4ghz ~ 3.6ghz of frequency. The product has an output power 180w. This product use gan hemt technology. Moreover, it corresponds to a2g35, a base product number of the product. The product is designated with the disc 3a001b3 code number.

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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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Mult Dev 14/Dec/2022(PCN Assembly/Origin)
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Mult Dev obs 08/Jul/2023(PCN Design/Specification)
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Mult Dev 25/May/2020(PCN Design/Specification)
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EOL NOTICE 06/Aug/2023(PCN Obsolescence/ EOL)
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A2G35S200-01SR3(Datasheets)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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You will get a confirmation email regarding your order of NXP USA Inc. A2G35S200-01SR3. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. A2G35S200-01SR3.
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