Infineon Technologies FF8MR12W1M1HS4PB11BPSA1

FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
8.1mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs:
297nC @ 18V
Vgs(th) (Max) @ Id:
5.15V @ 40mA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
100A (Tj)
Configuration:
2 N-Channel
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
21 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
8800pF @ 800V
Mounting Type:
Chassis Mount
Series:
CoolSiC™
Supplier Device Package:
AG-EASY1B
Packaging:
Tray
Power - Max:
-
Technology:
Silicon Carbide (SiC)
Base Product Number:
FF8MR12
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is FF8MR12W1M1HS4PB11BPSA1. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 8.1mohm @ 100a, 18v. The maximum gate charge and given voltages include 297nc @ 18v. The typical Vgs (th) (max) of the product is 5.15v @ 40ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 100a (tj). The product is available in 2 n-channel configuration. The infineon technologies's product offers user-desired applications. The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 21 weeks standard lead time. The product's input capacitance at maximum includes 8800pf @ 800v. The product is available in chassis mount configuration. The product coolsic™, is a highly preferred choice for users. ag-easy1b is the supplier device package value. In addition, tray is the available packaging type of the product. This product use silicon carbide (sic) technology. Moreover, it corresponds to ff8mr12, a base product number of the product. The product is designated with the ear99 code number.

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FF8MR12W1M1HS4P_B11(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Infineon Technologies FF8MR12W1M1HS4PB11BPSA1 and the best services all around the world ET23672584. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Infineon Technologies FF8MR12W1M1HS4PB11BPSA1, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Infineon Technologies, commonly silicon.

Our Infineon Technologies FF8MR12W1M1HS4PB11BPSA1 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FF8MR12W1M1HS4PB11BPSA1. We stock a large inventory containing a wide range of variety ET23672584, differentiates by its unique features Infineon Technologies. We also have discounts for potential customers and let it until most of them avail from Infineon Technologies FF8MR12W1M1HS4PB11BPSA1. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET23672584 from leading Infineon Technologies, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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