FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA, 2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc), 30A (Tc)
Configuration:
2 N-Channel (Dual), P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
200V, 40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Qualification:
AEC-Q101
standardLeadTime:
57 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
Die
Power - Max:
50W (Tc), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQUN700
ECCN:
EAR99
