PN Junction Semiconductor PAA12400BM3

PAA12400BM3 PN Junction Semiconductor
PN Junction Semiconductor

Product Information

FET Feature:
Silicon Carbide (SiC)
Vgs(th) (Max) @ Id:
5V @ 100mA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
Module
Current - Continuous Drain (Id) @ 25°C:
350A
Rds On (Max) @ Id, Vgs:
7.3mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
2 N-Channel (Half Bridge)
Package:
Tray
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds:
29.5pF @ 1000V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Module
Power - Max:
-
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This is manufactured by PN Junction Semiconductor. The manufacturer part number is PAA12400BM3. The FET features of the product include silicon carbide (sic). The typical Vgs (th) (max) of the product is 5v @ 100ma. The product has -40°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in module. The continuous current drain at 25°C is 350a. It has a maximum Rds On and voltage of 7.3mohm @ 300a, 20v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type 2 n-channel (half bridge). It is shipped in tray package . The product has a 1200v (1.2kv) drain to source voltage. The product's input capacitance at maximum includes 29.5pf @ 1000v. The product is available in chassis mount configuration. module is the supplier device package value.

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PAA12400BM3(Datasheets)

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