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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is UPA602T-T2-A. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.8v @ 1µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-59-6. It has a maximum Rds On and voltage of 25ohm @ 10ma, 10v. The continuous current drain at 25°C is 100ma. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 50v drain to source voltage. The product's input capacitance at maximum includes 16pf @ 5v. The product is available in surface mount configuration. sc-59 is the supplier device package value. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to upa602, a base product number of the product. The product is designated with the ear99 code number.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Renesas Electronics America Inc UPA602T-T2-A and the best services all around the world ET22565491. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Renesas Electronics America Inc UPA602T-T2-A, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Renesas Electronics America Inc, commonly silicon.
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