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This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB85UPE,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. The maximum gate charge and given voltages include 8.1nc @ 4.5v. It has a maximum Rds On and voltage of 103mohm @ 1.3a, 4.5v. The continuous current drain at 25°C is 2.9a. The product is available in 2 p-channel (dual) configuration. It is shipped in bulk package . The product has a 20v drain to source voltage. The product's input capacitance at maximum includes 514pf @ 10v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 515mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb85, a base product number of the product. The product is designated with the ear99 code number.
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Our NXP USA Inc. PMDPB85UPE,115 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMDPB85UPE,115. We stock a large inventory containing a wide range of variety ET22561933, differentiates by its unique features NXP USA Inc.. We also have discounts for potential customers and let it until most of them avail from NXP USA Inc. PMDPB85UPE,115. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET22561933 from leading NXP USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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