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This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB80XP,115. The FET features of the product include logic level gate, 1.8v drive. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. It has a maximum Rds On and voltage of 102mohm @ 2.7a, 4.5v. The maximum gate charge and given voltages include 8.6nc @ 4.5v. The continuous current drain at 25°C is 2.7a. The product is available in 2 p-channel (dual) configuration. It is shipped in bulk package . The product has a 20v drain to source voltage. The product's input capacitance at maximum includes 550pf @ 10v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 485mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb80, a base product number of the product.
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