NXP USA Inc. PMDPB70XP,115

PMDPB70XP-115 NXP USA Inc. PMDPB70XP,115
NXP USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
7.8nC @ 5V
Rds On (Max) @ Id, Vgs:
87mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
2.9A
Configuration:
2 P-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
680pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
490mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMDPB70
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB70XP,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. The maximum gate charge and given voltages include 7.8nc @ 5v. It has a maximum Rds On and voltage of 87mohm @ 2.9a, 4.5v. The continuous current drain at 25°C is 2.9a. The product is available in 2 p-channel (dual) configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 680pf @ 15v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 490mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb70, a base product number of the product. The product is designated with the ear99 code number.

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