International Rectifier IRF8313TRPBF

IRF8313TRPBF International Rectifier
International Rectifier

Product Information

FET Feature:
Logic Level Gate
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.35V @ 25µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
15.5mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C:
9.7A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
760pF @ 15V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
8-SO
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF8313
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This is manufactured by International Rectifier. The manufacturer part number is IRF8313TRPBF. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.35v @ 25µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 9nc @ 4.5v. It has a maximum Rds On and voltage of 15.5mohm @ 9.7a, 10v. The continuous current drain at 25°C is 9.7a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 760pf @ 15v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to irf8313, a base product number of the product.

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