Infineon Technologies IPG20N04S4-08

IPG20N04S4-08 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 30µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
40V
Input Capacitance (Ciss) (Max) @ Vds:
2940pF @ 25V
Mounting Type:
Surface Mount
Series:
OptiMOS™T2
Supplier Device Package:
PG-TDSON-8-4
Power - Max:
65W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPG20N
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPG20N04S4-08. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 30µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 7.6mohm @ 17a, 10v. The continuous current drain at 25°C is 20a (tc). The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 40v drain to source voltage. The product's input capacitance at maximum includes 2940pf @ 25v. The product is available in surface mount configuration. The product optimos™t2, is a highly preferred choice for users. pg-tdson-8-4 is the supplier device package value. The maximum power of the product is 65w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipg20n, a base product number of the product. The product is designated with the ear99 code number.

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